Location & Availability for: Residual lattice defects in Si(100) film

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Residual lattice defects in Si(100) films doped with low-energy B+ and As+ ions during growth by molecular-beam epitaxy : variation with ion energy and growth temperature /

by Jean-Paul Françis Noël.

Book Cover
Main Author: Noël, Jean-Paul Françis.
Published: 1990.
Topics: Theses - UIUC - 1990 - Metallurgical Engineering.
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Location & Availability for: Residual lattice defects in Si(100) film